Open AccessInfluence of growth impurities on thermal defect formation in monocrystalline silicon
Author(s) -
Yu. V. Pavlovskyy,
O.V. Berbets,
P.G. Lytovchenko
Publication year - 2021
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.22.3.437-443
Subject(s) - materials science , monocrystalline silicon , impurity , annealing (glass) , silicon , atmospheric temperature range , crystallography , chemical physics , condensed matter physics , metallurgy , thermodynamics , chemistry , physics , organic chemistry
The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The magnetic, micromechanical and structural properties of annealed silicon single crystals have been experimentally studied. The distribution of defects formed at different annealing temperatures has been studied. The correlation between changes of magnetic susceptibility, microhardness and rearrangement of structural defects in crystals after their heat treatment is revealed. Concentrations and sizes of magnetically ordered clusters are estimated. Interpretation of the obtained experimental results is offered.