Open AccessElectrical properties of strained germanium nanofilm
Author(s) -
S. V. Luniov,
П.Ф. Назарчук,
Olexandr Burban
Publication year - 2021
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.22.2.313-320
Subject(s) - germanium , materials science , electrical resistivity and conductivity , electron mobility , semiconductor , substrate (aquarium) , condensed matter physics , degenerate energy levels , band gap , optoelectronics , silicon , electrical engineering , physics , oceanography , quantum mechanics , geology , engineering
Dependences of the concentration of intrinsic current carriers, electron and hole mobilities and specific conductivity for strained germanium nanofilms grown on the Si, Ge(0,64)Si(0,36) and Ge(0,9)Si(0,1) substrates with crystallographic orientation (001), on their thickness at different temperatures were calculated on the basis of the statistics of non-degenerate two-dimensional electron and hole gas in semiconductors. The electrical properties of such nanofilms are determined by the peculiarities of their band structure. It is established that the effects of dimensional quantization, the probability of which increases with decreasing temperature, become significant for germanium nanofilms with the thickness of d 50 nm grown on the Ge(0,9)Si(0,1) substrate, an increase in the hole mobility at room temperature of more than 1.5 times was obtained. The obtained results of the electrical properties of strained germanium nanofilms can be used in producing on their basis new elements of nanoelectronic.