Open AccessTemperature dependence of the optical absorption edge of doped gallium arsenide
Author(s) -
Ig. Iv. Chychura,
I. I. Turianytsia,
Iv. Iv. Chychura
Publication year - 2020
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.21.2.288-293
Subject(s) - gallium arsenide , absorption edge , doping , absorption (acoustics) , attenuation coefficient , photon energy , semiconductor , enhanced data rates for gsm evolution , materials science , two photon absorption , gallium , photon , condensed matter physics , optics , optoelectronics , physics , band gap , laser , telecommunications , computer science , metallurgy
The temperature dependences of the optical absorption edges of Zn doped GaAs semiconductor crystals have been measured from 300 to 560 K. The temperature dependence of the optical absorption in the Urbach edges is adequately reproduced by a Bose-Einstein model. Analysis of experimental results gave us the opportunity to offer an explicit function of two arguments (photon energy and temperature) for the absorption coefficient of doped crystals in the Urbach edge region.