IR Photoinduced Piezoelectric Effects in Multi-Component Chalcogenides Ag2In(Ga)2Si(Ge)S(Se)6 | Zendy

G.L. Myronchuk | Zendy; O.V. Zamurujeva | Zendy; I.V. Kityk | Zendy

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IR Photoinduced Piezoelectric Effects in Multi-Component Chalcogenides Ag2In(Ga)2Si(Ge)S(Se)6

Author(s) -

G.L. Myronchuk,

O.V. Zamurujeva,

I.V. Kityk

Publication year - 2019

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.20.4.401-405

Subject(s) - piezoelectricity , materials science , irradiation , laser , phonon , excitation , wavelength , piezoelectric coefficient , optoelectronics , optics , condensed matter physics , composite material , physics , quantum mechanics , nuclear physics

The influence of external irradiation of CO2, CO, Er:glass, Nd:YA lasers on the piezoelectric properties of the Ag2In(Ga)2Si(Ge)S(Se)6 crystals was investigated. The maximum photoinduced changes in the piezoelectric coefficient were observed after irradiation with CO2 laser. CO photoinducing bicolour beams with 5.5 μm wavelength cause at least 4 times smaller increase in piezoelectric coefficients. Therefore, it can be expected that the primary mechanisms cause the excitation of the phonon subsystem.

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