Open AccessInfluence of Laser Radiation on Optical Properties of Semiconductor Materials
Author(s) -
P.O. Gentsar,
S. N. Levytskyi
Publication year - 2019
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.20.4.384-390
Subject(s) - materials science , laser , semiconductor , irradiation , optoelectronics , radiation , reflection (computer programming) , wavelength , getter , absorption (acoustics) , optics , physics , computer science , nuclear physics , composite material , programming language
In this paper, the transmission and reflection spectra of n-Si(100) single crystals are measured; n-GaAs(100); solid solutions of Ge1-хSiх (х = 0.85) in the range (0.2 - 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm. It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points.