Open AccessMeasurement of Thermoelectric Parameters of Thin-Film Semiconductor Materials Using the Harman Method
Author(s) -
Y. V. Tur,
Y. V. Pavlovskyi,
І. S. Virt
Publication year - 2019
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.20.3.306-310
Subject(s) - thermoelectric effect , semiconductor , materials science , thin film , optoelectronics , voltage , pulsed laser deposition , electrical engineering , physics , nanotechnology , thermodynamics , engineering
For the analysis of the measurement of thermoelectric parameters of semiconductors, the Harman pulsed method was used. The authors propose a new approach to determine the thermoelectric quality factor of thin semiconductor films in the temperature interval (300 ÷ 500) K by directly measuring a series of electric circuit parameters. The theory of the method is described in detail and its application in the measurement methodology. The dependences of electrical quantities on the time, namely voltage – V(t), are investigated at different values of current pulses for thin films PbTe grown by the pulsed laser deposition.