Open AccessSynthesis, Structural, Electrical Transport and Energetic Characteristics of ZrNi1-хVxSn Solid Solution
Author(s) -
L. Romaka,
Yu. Stadnyk,
V.V. Romaka,
A.M. Нoryn,
I. Romaniv,
V. Ya. Krayovskyy,
S. Dubelt
Publication year - 2019
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.20.3.275-281
Subject(s) - electrokinetic phenomena , solid solution , annealing (glass) , materials science , solid state , acceptor , arc melting , crystal structure , chemical physics , thermodynamics , analytical chemistry (journal) , alloy , nanotechnology , condensed matter physics , chemistry , crystallography , metallurgy , physics , chromatography
The samples of ZrNi1-хVxSn solid solution (x = 0 – 0.10) based on the ZrNiSn half-Heusler phase (MgAgAs structure type) were synthesized by direct arc-melting with homogenous annealing at 1073 K. The electrokinetic and energy state characteristics of the ZrNi1-хVxSn semiconducting solid solution were investigated in the temperature range T = 80 - 400 K. An analysis of behavior of the electrokinetic and energetic characteristics, in particular, the motion rate of the Fermi level, ΔεF/Δx for ZrNi1-хVxSn, allows to assume about the simultaneous generation of the structural defects of donor and acceptor nature in the crystal. The additional researches are required to establish the mechanisms of donor generation.