Open AccessElectro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals
Author(s) -
S. Solodin,
Ye. Nikoniuk,
Г.І. Раренко,
P. Fochuk
Publication year - 2019
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.20.2.144-148
Subject(s) - doping , electrical resistivity and conductivity , materials science , analytical chemistry (journal) , ohm , hall effect , germanium , conductivity , ionization , electron mobility , chemistry , ion , optoelectronics , physics , silicon , organic chemistry , chromatography , quantum mechanics
Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2 /(V´s).