Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals | Zendy

S. Solodin | Zendy; Ye. Nikoniuk | Zendy; Г.І. Раренко | Zendy; P. Fochuk | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals

Author(s) -

S. Solodin,

Ye. Nikoniuk,

Г.І. Раренко,

P. Fochuk

Publication year - 2019

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.20.2.144-148

Subject(s) - doping , electrical resistivity and conductivity , materials science , analytical chemistry (journal) , ohm , hall effect , germanium , conductivity , ionization , electron mobility , chemistry , ion , optoelectronics , physics , silicon , organic chemistry , chromatography , quantum mechanics

Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2 /(V´s).

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research