Open AccessInvestigation of Electronic Structure of Zr1-xVxNiSn Semiconductive Solid Solution
Author(s) -
Yu. Stadnyk,
V.V. Romaka,
В. А. Ромака,
A.M. Нoryn,
L. Romaka,
Volodymyr Krayovskyy,
I. Romaniv
Publication year - 2019
Publication title -
physics and chemistry of solid state
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.20.2.127-132
Subject(s) - acceptor , semiconductor , fermi level , solid solution , electronic structure , materials science , band gap , impurity , density of states , conduction band , chemical physics , condensed matter physics , chemistry , computational chemistry , optoelectronics , electron , physics , organic chemistry , quantum mechanics , metallurgy
The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0 - 0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of Zr1-xVxNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr1-xVxNiSn semiconductive solid solution. It was established that in the band gap of Zr1-xVxNiSn the energy states of the impurity donor εD2 and acceptor εA1 levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor.
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