
Specific Features of Photoconductivity of Tl1-xIn1-xSnxSe2 Monocrystals at Low Temperatures
Author(s) -
Oleksiy Novosad,
G.L. Myronchuk,
S.P. Danylchuk,
Оksana Zamurueva,
Л.В. Піскач,
I.V. Kityk,
M. Piasecki,
O.V. Tsisar
Publication year - 2019
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.20.1.55
Subject(s) - photoconductivity , atmospheric temperature range , spectral line , materials science , recombination , relaxation (psychology) , activation energy , crystallization , range (aeronautics) , analytical chemistry (journal) , electron , chemistry , optoelectronics , physics , thermodynamics , composite material , psychology , social psychology , biochemistry , organic chemistry , chromatography , astronomy , gene , quantum mechanics
The photoconductivity spectra in the temperature range T≈36-200 K and the spectra of thermostimulated currents in the temperature range T≈70-300 K of Tl1-xIn1-xSnxSe2 single crystals obtained by directional crystallization of Bridgman-Stockbarger have been studied. The induced photoconductivity and long-term photoconductivity relaxation processes have been found. To interpret the found results, a model of two-center recombination has been suggested. It is illustrated that the role of the r-centers of slow recombination are formed by Tl vacancies. On the basis of the studies of the spectra of thermally stimulated currents, the thermal energy of electrons activation with t-levels of adhesion has been determined.