Open AccessInvestigation of structural, electrokinetic and energy state properties of the semiconductive Zr1-xVxNiSn solid solution
Author(s) -
V.V. Romaka,
L. Romaka,
Yuriy Stadnyk,
A. Horyń,
V. Ya. Krayovskyy,
I. Romaniv,
Petro Garanuyk
Publication year - 2019
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.20.1.39
Subject(s) - doping , electrokinetic phenomena , acceptor , materials science , semiconductor , band gap , solid state , solid solution , lattice (music) , condensed matter physics , chemical physics , nanotechnology , chemistry , optoelectronics , metallurgy , physics , acoustics
Structural, electrokinetic and energy state characteristics of the Zr1-xVxNiSn semiconductive solid solution (х=0–0.10) were investigated in the temperature interval 80–400 К. It was shown that doping of the ZrNiSn compound by V atoms (rV=0.134 nm) due to substitution of Zr (rZr=0.160 nm) results in increase of lattice parameter а(х) of Zr1-xVxNiSn indicating unforecast structural change. Based on analysis of the motion rate of the Fermi level ΔεF/Δх for Zr1-xVxNiSn in direction of the conduction band it was concluded about simultaneous generation of the structural defects of the donor and acceptor nature (donor-acceptor pairs) by unknown mechanism and creation of the corresponding energy levels in the band gap of the semiconductor.