Open AccessThermal Field Stabilization of the Threshold Voltage of the Field Transistors of the Submicron Technology of the LSI
Author(s) -
Stepan Novosyadliy,
Volodymyr Gryga,
I.I. Kurysh,
Mariia I. Melnyk
Publication year - 2018
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.19.4.352-357
Subject(s) - oxidizing agent , materials science , shutter , optoelectronics , silicon , transistor , thermal , interphase , voltage , field (mathematics) , field effect transistor , electrical engineering , chemistry , optics , physics , thermodynamics , engineering , organic chemistry , genetics , biology , mathematics , pure mathematics
On the basis of the analysis of the volume correspondence of the phases in the active gate system Si-SiO2, the possibility of obtaining a negative charge in the shutter system of submicron LSI is shown. Such a technological method has been experimentally verified at low temperature oxidation of silicon, which is patented. Studies have established that the magnitude of charge at the interphase boundary can be significantly influenced by introducing into the oxidizing atmosphere of halogen-containing compounds.