Open AccessElectrical Transport Properties of R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) Compounds
Author(s) -
I. Romaniv,
B. Kuzhel,
L. Romaka,
Volodymyr Pavlyuk
Publication year - 2018
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.19.4.316-321
Subject(s) - electrical resistivity and conductivity , intermetallic , orthorhombic crystal system , materials science , condensed matter physics , metal , chemistry , crystal structure , crystallography , metallurgy , physics , alloy , quantum mechanics
Electrical transport properties of the R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) intermetallics crystallized in the orthorhombic Gd3Cu4Ge4 structure type (space group Immm) were studied in the temperature interval 11 – 300 K. Measurements of the temperature dependencies of electrical resistivity (r(T)) showed that all the studied compounds are characterized by metallic type of conductivity. The slope change of the resistivity at low temperature part of r(T) dependencies for Gd3Ag4Sn4, Tb3Ag4Sn4 and Dy3Ag4Sn4 compounds is connected with their magnetic ordering. Change of the resistivity caused by magnetic ordering was not observed for the Ho3Ag4Sn4 compound in the studied temperature interval. Relation between magnetic and electric properties of the investigated R3Ag4Sn4 compounds was analyzed.