Open AccessElectrical Conductivity and Magnetoresistance of Silicon Microstructures in the Vicinity to Metal-Insulator Transition
Author(s) -
Yuriy Khoverko,
N. O. Shcherban
Publication year - 2019
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.19.3.246-253
Subject(s) - magnetoresistance , materials science , impurity , condensed matter physics , magnetic field , silicon , electrical resistivity and conductivity , ohm , boron , metal–insulator transition , magnetism , transition metal , doping , conductivity , metal , metallurgy , chemistry , optoelectronics , physics , biochemistry , organic chemistry , quantum mechanics , catalysis
Complex research of silicon microcrystals with specific resistance from ρ300K = 0.025 Ohm × cm to ρ300K =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectric and modified transition metal nickel at low temperatures to the temperature of liquefied heliumT = 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at lowtemperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity insemiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,magnetic field, deformation) is proposed.