Open AccessPeculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit
Author(s) -
N. T. Humeniuk,
Sviatoslav Novosiadlyi,
Volodymyr Mandzyuk,
І. Z. Huk
Publication year - 2019
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.19.2.186-190
Subject(s) - materials science , optoelectronics , gallium arsenide , schottky diode , silicide , transistor , field effect transistor , microwave , nitride , sputtering , gallium nitride , nanotechnology , electrical engineering , silicon , diode , thin film , voltage , computer science , engineering , layer (electronics) , telecommunications
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of tungsten, are considered in the paper. A highly effective technology for theformation of capsular layers of AlN and BN nitride films by high-frequency magnetron sputtering of the propertarget in nitric plasma for the realization of GaAs-based MOS-transistors is developed.