Open AccessStudy of electrokinetic and magnetic properties of ZrNi1-xRhxSn semiconductive solid solution
Author(s) -
L. Romaka,
Yu. Stadnyk,
В. А. Ромака,
A. Horyń,
V. Ya. Krayovskyy
Publication year - 2018
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.19.1.21-28
Subject(s) - acceptor , seebeck coefficient , valence (chemistry) , materials science , charge carrier , solid solution , fermi level , condensed matter physics , solid state , magnetic moment , chemistry , crystallography , chemical physics , electron , optoelectronics , physics , metallurgy , organic chemistry , quantum mechanics , thermal conductivity , composite material
The features of electrokinetic, energy state and magnetic characteristics of ZrNi1-xRhxSn semiconductive solid solution were investigated in the ranges: T = 80-400 K, x = 0-0.10. It was shown that substitution of Ni atoms (3d84s2) by Rh atoms (4d85s1) in the structure of ZrNiSn compound generated the structural defects with acceptor nature, and holes became the main charge carriers in the ZrNi1-xRhxSn at low temperature. Based on analysis of the motion rate of the Fermi level ΔεF/Δх in ZrNi1-xRhxSn to the valence band and change of sign of thermopower coefficient from positive to negative it was suggested that the structural defects of acceptor and donor natures were generated simultaneously (donor-acceptor pairs), and deep donor band ɛD2 was formed.