Open AccessPeculiarities of Morphology Formation of Silicon Surface under the Action of Laser Pulses
Author(s) -
O. Yu. Bonchyk,
S. G. Kiyak,
I. A. Mohylyak,
D. I. Popovych
Publication year - 2017
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.18.3.309-312
Subject(s) - silicon , materials science , surface (topology) , laser , orientation (vector space) , millisecond , semiconductor , amorphous silicon , morphology (biology) , plane (geometry) , crystal (programming language) , monocrystalline silicon , crystallography , optics , amorphous solid , geometry , optoelectronics , crystalline silicon , chemistry , physics , astronomy , mathematics , computer science , programming language , biology , genetics
The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic studies of periodic structures that are formed on the surfaces with crystallographic orientation (111) (110) (100) and on planes, cut at an angle of 6° to the plane (100) and amorphous layers В2О3 deposited on the surface of silicon were presented. The results can be used to determine the crystallographic orientation of the semiconductor surface and express assessment of disorientation degree of crystal surface.