Open AccessInvestigation of Band Structure of ZrNiSn1-xGax Semiconductor Solid Solution
Author(s) -
L. Romaka,
Yu. Stadnyk,
V.V. Romaka,
V.Ya. Krayovsky,
P. Rogl,
A.M. Нoryn
Publication year - 2017
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.18.2.187-193
Subject(s) - semiconductor , acceptor , solid solution , materials science , crystal structure , lattice (music) , fermi level , electronic band structure , crystallography , doping , chemical physics , condensed matter physics , optoelectronics , chemistry , metallurgy , physics , quantum mechanics , acoustics , electron
The mechanism of simultaneous generation of donor-acceptor pairs in ZrNiSn1-xGax semiconductor solid solution is established. The modeled distribution of atoms in the crystal lattice of ZrNiSn1-xGax showed that the speed of movement of Fermi level εF, obtained from the band structure calculations is in agreement with experimental extracted from lnρ(1/T) dependencies. It is shown that with substitution of Sn (5s25p2) with Ga (4s24p1) atoms in 4b crystallographic site both acceptor and donor (vacancies in 4b site) defects are generated.