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The synthesis of Ag8SnSe6 argyrodite thin films with thickness 500 nm by selenization of Ag-Sn film at 480 oC was carried out. Thin films were investigated by X-ray diffraction. Ternary Ag8SnSe6 synthesized in orthorhombic structure with the lattice parameters a = 7.9081(6) Å, b = 7.8189(7) Å, c = 11.0464(9) Å, V = 683.03(10) Å3. Resistive switching cell based on Ag8SnSe6 argyrodite with silver and graphite electrodes was fabricated. Electrical properties of cell were investigated using impedance spectroscopy and cyclic voltammetry. Cell structure and process in this cell were modeled by electric equvivalent circuit. Resistive switching phenomena in Ag/Ag8SnSe6/C cell at certain applied voltage were demonstrated.