Open AccessIndium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature
Author(s) -
Leandro Voisin,
Makoto Ohtsuka,
Takashi Nakamura,
Svitlana Petrovska,
B. Ilkiv,
Ruslan Sergiienko
Publication year - 2017
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.18.1.69-74
Subject(s) - indium , indium tin oxide , materials science , thin film , amorphous solid , sputtering , crystallinity , tin , transmittance , argon , transparent conducting film , oxide , oxygen , deposition (geology) , analytical chemistry (journal) , electrical resistivity and conductivity , sputter deposition , metallurgy , composite material , optoelectronics , chemistry , nanotechnology , crystallography , paleontology , organic chemistry , chromatography , sediment , biology , engineering , electrical engineering
Indium saving indium tin oxide ITO thin films have been deposited using a sputtering deposition technique in pure Ar and in mixed argon-oxygen atmosphere at room temperature. A transmittance value of more than 85 % in the visible region of the spectrum and a resistivity of 2420 µΩcm has been obtained for the thin films deposited in pure Ar and subsequently heat treated at 923 K. The structure of the as-deposited indium saving indium-tin oxide films was amorphous and the crystallinity was improved with increasing heat treatment temperature. An increase in the heat treatment temperature does not enhance the transmittance of the films at oxygen flow rate higher than 0.4 cm3/min.