Open AccessFeatures of Structural, Electrokinetic, and Energy State Characteristics of ZrNiSn1-xGax Solid Solution
Author(s) -
L. Romaka,
A.M. Нoryn,
Yu. Stadnyk,
V. Ya. Krayovskyy,
В. А. Ромака,
Zlata Rykavets,
P. Rogl
Publication year - 2017
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.18.1.41-48
Subject(s) - acceptor , impurity , solid state , materials science , crystallography , crystal structure , band gap , solid solution , crystal (programming language) , chemistry , condensed matter physics , optoelectronics , metallurgy , physics , organic chemistry , computer science , programming language
Features of structural, electrokinetic, and energy state characteristics of ZrNiSn1-xGax semiconductive solid solution were investigated in the temperature ranges Т = 80 - 400 K and х = 0 - 0.15. Disorder of crystal structure for n-ZrNiSn compound as a result of occupation of Zr (4d25s2) atoms in 4a sites by Ni (3d84s2) ones up to ~ 1 % was confirmed. It generated donor levels band ɛD1 in the band gap. It was shown that introduction of Ga (4s24p1) atoms by means of substitution of Sn (5s25p2) ones ordered crystal structure. In this case acceptor defects were generated in 4b sites and it created extended acceptor impurity band ɛА. It was suggested that with generation of acceptor structural defects the vacancies in the Sn (4b) atomic sites simultaneously generated donor defects and formed deep donor band ɛD2 (donor-acceptor pair took place).