Open AccessInvestigation of Changes in Resistivity of n-Si with Temperature and Uniaxial Stress
Author(s) -
Г. П. Гайдар
Publication year - 2017
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.18.1.34-40
Subject(s) - anisotropy , electrical resistivity and conductivity , condensed matter physics , materials science , redistribution (election) , stress (linguistics) , transverse plane , work (physics) , thermodynamics , physics , optics , structural engineering , linguistics , philosophy , quantum mechanics , politics , political science , law , engineering
In this work the changes in resistivity of n‑Si with temperature and uniaxial stress X, oriented both in and in [111] direction, were investigated. The value of the anisotropy parameter of mobility was obtained in the conditions of J || X || [100] and J ┴ X || [100] with using the experimental data concerning longitudinal and transverse tenso-resistance. The presence of the n-Si tenso-resistance was found in the conditions of X || J ||[111], i.e., in the absence of the interminimum redistribution of charge carriers. The physical explanation of the results was presented.