Open AccessInfluence of the C4H6O6 Concentration in the (NH4)2Cr2O7 HBr C4H6O6 Composition on the Chemical-Dynamic Polishing of the III-V Semiconductors
Author(s) -
Iryna Levchenko,
G. P. Malanych,
Vasyl Tomashyk,
I. B. Stratiychuk
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.4.604-610
Subject(s) - polishing , etching (microfabrication) , tartaric acid , dissolution , isotropic etching , chemical composition , semiconductor , materials science , chemical mechanical planarization , composition (language) , chemical engineering , analytical chemistry (journal) , chemistry , nanotechnology , metallurgy , optoelectronics , layer (electronics) , chromatography , organic chemistry , engineering , citric acid , linguistics , philosophy
The paper presents the results of experimental determination of the influence of the initial concentration of tartaric acid on the features of the chemical interaction of InAs, InSb, GaAs and GaSb with (NH4)2Cr2O7‑HBr‑C4H6O6 etching solutions. It was established that C4H6O6 decreases the general crystals dissolution rate because it increases the etching compositions viscosity, and also enhances the polishing properties of the etching solutions. The comparative analysis of the etching mixtures composition changes influence demonstrates that the using of 40 % C4H6O6, in comparison with 27 %, provides the higher quality polishing of the crystals surface.