Open AccessStructure and Vibrational Spectra of thin Films β-Ga2O3
Author(s) -
О. М. Бордун,
M. Partyka,
І Medvid,
I. Yo. Kukharskyy,
V.V. Ptashnyk,
Б. О. Бордун
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.4.515-519
Subject(s) - octahedron , thin film , annealing (glass) , spectral line , materials science , infrared spectroscopy , quartz , ion , sputtering , crystallography , tetrahedron , reflection (computer programming) , infrared , crystal structure , analytical chemistry (journal) , chemistry , optics , nanotechnology , physics , organic chemistry , chromatography , astronomy , computer science , programming language , composite material
The structure, phase composition and surface morphology of thin films b-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fused quartz substrate υ-SiO2 in region 400–1600 cm-1 at 295 K were measured. The peaks in the spectrum of films b-Ga2O3, associated with vibration of Ga – O fragments in structural tetrahedral GaO4 and octahedral GaO6 complexes was interpreted.