Open AccessElectrophysical Properties of Indium Doped As2(S, Se)3 thin Films
Author(s) -
Iaroslav Grytsyshche,
М. І. Козак,
І. І. Чичура,
А. М. Соломон,
В. М. Красилинець,
Vasyl Loya
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.4.511-514
Subject(s) - indium , doping , thin film , materials science , photovoltaic system , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , electrical engineering , environmental chemistry , engineering
The electrical studies of In-doped thin films based glassy As2S3 and As2Se3, determined the energy of activation, the analysis of photovoltaic memory samples.