Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe | Zendy

V. M. Katerynchuk | Zendy; Оксана Степанівна Литвин | Zendy; Z. R. Kudrynskyi | Zendy; Z. D. Kovalyuk | Zendy; I. G. Tkachuk | Zendy; Б. В. Кушнір | Zendy

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Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe

Author(s) -

V. M. Katerynchuk,

Оксана Степанівна Литвин,

Z. R. Kudrynskyi,

Z. D. Kovalyuk,

I. G. Tkachuk,

Б. В. Кушнір

Publication year - 2016

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.17.4.507-510

Subject(s) - heterojunction , photoelectric effect , band diagram , materials science , optoelectronics , van der waals force , dielectric , gate dielectric , oxide , chemistry , molecule , transistor , physics , voltage , organic chemistry , quantum mechanics , metallurgy

We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.

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