Open AccessTopology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe
Author(s) -
V. M. Katerynchuk,
Оксана Степанівна Литвин,
Zakhar R. Kudrynskyi,
Z. D. Kovalyuk,
I. G. Tkachuk,
Б. В. Кушнір
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.4.507-510
Subject(s) - heterojunction , photoelectric effect , band diagram , materials science , optoelectronics , van der waals force , dielectric , gate dielectric , oxide , chemistry , molecule , transistor , physics , voltage , organic chemistry , quantum mechanics , metallurgy
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.