Open AccessThe Electrical Conductivity in Superlattices of Spherical Quantum Dots
Author(s) -
В. І. Бойчук,
I.V. Bilynskyi,
R.I. Pazyuk
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.3.320-328
Subject(s) - superlattice , condensed matter physics , electrical resistivity and conductivity , radius , materials science , quantum dot , conductivity , electron , aluminium , semiconductor , chemistry , physics , nanotechnology , composite material , optoelectronics , quantum mechanics , computer security , computer science
The electrical properties of semiconductor systems of spherical GaAs / AlxGa1-xAs quantum dots of various dimensions, depending on the energy of the Fermi level and temperature, and the concentration of aluminum in the matrix, are investigated. Dependences of group velocity of electrons on the index of minisons were obtained. Reducing the CT radius, as well as increasing the aluminum concentration in the matrix, results in an increase in group velocity. The change in the sign of the group velocity of individual minisons is caused by the behavior of the isoenergetic surfaces of these minisons. The electrical conductivity is calculated, containing the contributions of the s- and three p-minisons for given parameters of the system, the maximum of which is near the center of the minisone. The increase in electrical conductivity is observed with a decrease in the CT radius and the aluminum concentration, as well as with the decrease of the GaAs / AlxGa1-xAs superlattice dimension. The temperature dependence of electrical conductivity for various parameters of such systems is also investigated.