Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits | Zendy

S.P. Novosyadlyj | Zendy; Sergiy Boyko | Zendy

Open Access

Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits

Author(s) -

S.P. Novosyadlyj,

Sergiy Boyko

Publication year - 2016

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.17.2.281-285

Subject(s) - heterojunction bipolar transistor , common emitter , bipolar junction transistor , heterojunction , heterostructure emitter bipolar transistor , optoelectronics , materials science , transistor , ring oscillator , electrical engineering , voltage , engineering , cmos

This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be reduced to 8 ps at a maximum current of 105 A/cm2. HBT with one and two (emitter and collector) heterojunctions showed 24 ps delay at 9.1 mW and 17 ps at 40 mW.

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