Open AccessDesign and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits
Author(s) -
S.P. Novosyadlyj,
Sergiy Boyko
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.2.281-285
Subject(s) - heterojunction bipolar transistor , common emitter , bipolar junction transistor , heterojunction , heterostructure emitter bipolar transistor , optoelectronics , materials science , transistor , ring oscillator , electrical engineering , voltage , engineering , cmos
This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be reduced to 8 ps at a maximum current of 105 A/cm2. HBT with one and two (emitter and collector) heterojunctions showed 24 ps delay at 9.1 mW and 17 ps at 40 mW.