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Chemical Treatment of CdTe and Solid Solution ZnxCd1-xTe and Cd0,2Hg0,8Te and Aqueous Solutions of HNO3–НІ-Lactate Acid
Author(s) -
E.E. Hvozdiyevskyy,
З. Ф. Томашик,
Vasyl Tomashyk,
R.O. Denysyuk
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.2.247-250
Subject(s) - dissolution , etching (microfabrication) , aqueous solution , polishing , cadmium telluride photovoltaics , solid solution , isotropic etching , kinetics , semiconductor , solvent , chemistry , chemical mechanical planarization , chemical composition , inorganic chemistry , materials science , analytical chemistry (journal) , chemical engineering , chromatography , metallurgy , nanotechnology , organic chemistry , optoelectronics , layer (electronics) , engineering , physics , quantum mechanics
The method of disk rotating kinetics of dissolution processes CdTe, ZnxCd1-xTe and Cd0,2Hg0,8Te in yodvydilyayuchyh etching compositions HNO3-NO-lactate acid. The dependence of etching rate of said material concentration oxidizer and organic solvent. Optimized polishing compositions herbalists and modes chemical dynamic polishing of semiconductor materials studied. The influence of Zn and Hg content in the composition of solid solutions on the quality of the resulting surface etching mixtures.