Open AccessInvestigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution
Author(s) -
L. Romaka,
P. Rogl,
A.M. Нoryn,
V. Ya. Krayovskyy,
Yu. Stadnyk,
V.V. Romaka
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.2.212-221
Subject(s) - crystal structure , crystallography , materials science , crystal (programming language) , solid solution , solid state , semiconductor , atom (system on chip) , chemistry , optoelectronics , metallurgy , embedded system , computer science , programming language
The features of structural, energy state and electrokinetic characteristics were investigated for Hf1‑xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a crystallographic site of Hf (5d26s2) atoms by Ni (3d84s2) ones up to ~ 1 % that generates in the crystal structural defects of donor nature. It was shown that introduction of Tm atoms ordered crystal structure (“healing” of structural defects). It was established mechanisms of simultaneous generation of structural defects as acceptors by substitution of Hf (5d26s2) by Tm (4f135d06s2) atoms, and the donor nature defects as a result of the appearance of vacancies in the Sn (4b) atoms sites, which determines the mechanisms of conductivity for Hf1-xTmxNiSn.