Open AccessElectric and photoelectric properties of solid solutions Ag2In2Si(Ge)Se6
Author(s) -
Оксана Замуруєва,
M.V. Khvyshchu,
O. V. Parasyuk,
G.L. Myronchuk
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.2.202-206
Subject(s) - conductivity , photoelectric effect , excited state , impurity , interpretation (philosophy) , electrical resistivity and conductivity , condensed matter physics , materials science , solid solution , activation energy , thermodynamics , chemistry , physics , atomic physics , quantum mechanics , optoelectronics , computer science , metallurgy , programming language
Temperature depen-dences of specific dark conductivity and spectral distributions ofphotoconductivity have been studied. It has been established thatthe Ag2In2SiSe6and Ag2In2GeSe6single crystals are high-resistancesemiconductors withp-type conductivity. The interpretation of experimental results conducted under the Mott model for disordered systems. Thus, from the experimental results follows that the solid solution AgInSe2 - Si(Ge)Se2 when the temperature drops from 300 to 200 K, the conductivity in the area carried thermo excited permitted carriers impurity activation energy of ~ 0.59eV and 0.48eV for Ag2In2SiSe6 and Ag2In2GeSe6 respectively.