Open AccessThe Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire
Author(s) -
M. A. Ruvinskiǐ,
O. B. Kostyuk,
B. M. Ruvinskii
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.1.7-10
Subject(s) - semiconductor , condensed matter physics , seebeck coefficient , quantum wire , electrical resistivity and conductivity , thermal conductivity , materials science , relaxation (psychology) , quantum well , quantum , gaussian , conductivity , physics , optoelectronics , quantum mechanics , composite material , psychology , social psychology , laser
It was theoretically determined the electrical conductivity, thermopower and thermal conductivity of semiconductor quantum wire conditioned by a random field of Gaussian fluctuations of wire thickness. We present the results for cases nondegenerate and generate statistics of carriers. The considered mechanism of relaxation of the carriers is essential for sufficiently thin and clean wire from the А3В5 and А4В6 type of semiconductors at low temperatures. The quantum size effects that are typical of quasi-one-dimensional systems were revealed.