Open AccessThe Luminescent Centra in thin Films of β–Ga2O3 and (Y0.06Ga0.94)2O3
Author(s) -
О. М. Бордун,
Б. О. Бордун,
I. Yo. Kukharskyy,
І Medvid
Publication year - 2016
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.17.1.53-59
Subject(s) - photoexcitation , luminescence , photoluminescence , thin film , materials science , spectral line , maxima , sputtering , analytical chemistry (journal) , ion , atomic physics , optoelectronics , chemistry , excited state , nanotechnology , physics , art , chromatography , astronomy , performance art , art history , organic chemistry
Photoexcitation and photoluminescence spectra of b–Ga2O3 and (Y0.06Ga0.94)2O3 thin films obtained by high-frequency ion-plasmous sputtering was investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. The nature of two intensive luminescent band with maxima in region 3.00 and 3.15 eV and two faint intensive luminescent band with maxima in region 4.00 and 4.25 eV was discussion. Luminescence decay time for band with maximum in region 3.00 and 3.15 eV in different types of b–Ga2O3 and (Y0.06Ga0.94)2O3 thin films was established.