Analysis of Defect Subsystem ZnSe, Doped with Transition Metals (Co, Ni) | Zendy

L.I. Nykyruy | Zendy; V.V. Prokopiv | Zendy; M.P. Levkun | Zendy; Anastasiia Lysak | Zendy

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Analysis of Defect Subsystem ZnSe, Doped with Transition Metals (Co, Ni)

Author(s) -

L.I. Nykyruy,

V.V. Prokopiv,

M.P. Levkun,

Anastasiia Lysak

Publication year - 2015

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.16.4.716-721

Subject(s) - doping , hall effect , materials science , crystal (programming language) , transition metal , crystallographic defect , transition point , analytical chemistry (journal) , crystallography , condensed matter physics , chemistry , thermodynamics , optoelectronics , electrical resistivity and conductivity , physics , catalysis , environmental chemistry , computer science , quantum mechanics , programming language , biochemistry

The crystal-quasichemical formulae of doping at the Crystals n-ZnSе:Cо(Ni) аnd p-ZnSе:Cо(Ni) are suggested. The dependence on point defects concentration, on free chargecarrier concentration and Hall concentration of the degree of nonstoichiometry (α, β) are calculated.

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