Open AccessAnalysis of Defect Subsystem ZnSe, Doped with Transition Metals (Co, Ni)
Author(s) -
Lyubomyr Nykyruy,
V.V. Prokopiv,
M. P. Levkun,
Anastasiia Lysak
Publication year - 2015
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.16.4.716-721
Subject(s) - doping , hall effect , materials science , crystal (programming language) , transition metal , crystallographic defect , transition point , analytical chemistry (journal) , crystallography , condensed matter physics , chemistry , thermodynamics , optoelectronics , electrical resistivity and conductivity , physics , catalysis , environmental chemistry , computer science , quantum mechanics , programming language , biochemistry
The crystal-quasichemical formulae of doping at the Crystals n-ZnSе:Cо(Ni) аnd p-ZnSе:Cо(Ni) are suggested. The dependence on point defects concentration, on free chargecarrier concentration and Hall concentration of the degree of nonstoichiometry (α, β) are calculated.