Open AccessSelective Etching of ZnхCd1-хTe Single Crystals
Author(s) -
G. M. Okrepka,
V. М. Tomashik
Publication year - 2015
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.16.4.711-715
Subject(s) - etching (microfabrication) , dislocation , materials science , crystallography , conductivity , semiconductor , single crystal , crystal (programming language) , isotropic etching , table (database) , optoelectronics , chemistry , nanotechnology , computer science , layer (electronics) , programming language , data mining
Selective etching is an express method to identify the defects of crystal structure of semiconductors. It reveals the dislocations density, type of conductivity, crystal’s orientation, inclusions/precipitates, twins. This article is the review of selective etching of ZnxCd1-xTe single crysrals. All informations has been generalized in the table. Qualitative and quantitative compositions of etchants and information about defect structure of ZnxCd1-xTe after etchant treatment have been represented in the table.