Selective Etching of ZnхCd1-хTe Single Crystals | Zendy

G.M. Okrepka | Zendy; V.М. Tomashik | Zendy

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Selective Etching of ZnхCd1-хTe Single Crystals

Author(s) -

G.M. Okrepka,

V.М. Tomashik

Publication year - 2015

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.16.4.711-715

Subject(s) - etching (microfabrication) , dislocation , materials science , crystallography , conductivity , semiconductor , single crystal , crystal (programming language) , isotropic etching , table (database) , optoelectronics , chemistry , nanotechnology , computer science , layer (electronics) , programming language , data mining

Selective etching is an express method to identify the defects of crystal structure of semiconductors. It reveals the dislocations density, type of conductivity, crystal’s orientation, inclusions/precipitates, twins. This article is the review of selective etching of ZnxCd1-xTe single crysrals. All informations has been generalized in the table. Qualitative and quantitative compositions of etchants and information about defect structure of ZnxCd1-xTe after etchant treatment have been represented in the table.

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