Open AccessTheoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films
Author(s) -
O. O. Gavryliuk,
O. Yu. Semchuk,
B. V. Lytovchenko
Publication year - 2015
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.16.4.675-678
Subject(s) - stoichiometry , annealing (glass) , materials science , silicon , laser , nanoparticle , thermal conductivity , conductivity , thin film , composite material , nanotechnology , optoelectronics , optics , chemistry , physics
In this work, spreading of temperature profiles and influence of a temperature on forming silicon nanoparticles in non-stoichiometric SiOx films after laser annealing is investigated. Using parabolic thermal conductivity equation, mathematical simulation of temperature profiles is realized in a non-stoichiometric SiOx film after laser annealing. It is shown that temperature 1800 K on a SiOx surface is sufficient for separating the film material on silicon dioxide and its nanoparticles. IR-investigations confirm this separating.