Theoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films | Zendy

O. O. Gavryliuk | Zendy; O. Yu. Semchuk | Zendy; B. V. Lytovchenko | Zendy

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Theoretical and Experimental Investigations of Laser Annealing Non-Stoichiometric SiOx Films

Author(s) -

O. O. Gavryliuk,

O. Yu. Semchuk,

B. V. Lytovchenko

Publication year - 2015

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.16.4.675-678

Subject(s) - stoichiometry , annealing (glass) , materials science , silicon , laser , nanoparticle , thermal conductivity , conductivity , thin film , composite material , nanotechnology , optoelectronics , optics , chemistry , physics

In this work, spreading of temperature profiles and influence of a temperature on forming silicon nanoparticles in non-stoichiometric SiOx films after laser annealing is investigated. Using parabolic thermal conductivity equation, mathematical simulation of temperature profiles is realized in a non-stoichiometric SiOx film after laser annealing. It is shown that temperature 1800 K on a SiOx surface is sufficient for separating the film material on silicon dioxide and its nanoparticles. IR-investigations confirm this separating.

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