Open AccessLow-Impedance Investigations of Hydrogenated GaSe Layered Crystals
Author(s) -
V. M. Kaminskiĭ,
T. I. Bratanich,
Zakhar D. Kovalyuk,
V. B. Boledzyuk,
V. I. Ivanov,
V. V. Netyaga
Publication year - 2015
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.16.4.654-657
Subject(s) - materials science , condensed matter physics , thermal conduction , permittivity , dielectric , electrical impedance , character (mathematics) , frequency dependence , conduction band , dielectric permittivity , optoelectronics , nuclear magnetic resonance , composite material , electrical engineering , physics , electron , geometry , mathematics , quantum mechanics , engineering
The structure, electrical and dielectric properties of hydrogenated gallium selenide crystals were investigated. It was shown that AC-conduction mechanism along the crystallographic axis C in the 103–105 Hz have hopping character. The parameters of the band theory of hopping conduction were calculated. The frequency dependence of ε' and ε'' components of permittivity in HxGaSe were obtained.