Low-Impedance Investigations of Hydrogenated GaSe Layered Crystals | Zendy

V. M. Kaminskiĭ | Zendy; V. V. Netyaga | Zendy; Z. D. Kovalyuk | Zendy; V. B. Boledzyuk | Zendy; V. І. Ivanov | Zendy; T. I. Bratanich | Zendy

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Low-Impedance Investigations of Hydrogenated GaSe Layered Crystals

Author(s) -

V. M. Kaminskiĭ,

V. V. Netyaga,

Z. D. Kovalyuk,

V. B. Boledzyuk,

V. І. Ivanov,

T. I. Bratanich

Publication year - 2015

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.16.4.654-657

Subject(s) - materials science , thermal conduction , condensed matter physics , permittivity , dielectric , electrical impedance , character (mathematics) , conduction band , frequency dependence , optoelectronics , nuclear magnetic resonance , composite material , physics , electron , mathematics , quantum mechanics , geometry

The structure, electrical and dielectric properties of hydrogenated gallium selenide crystals were investigated. It was shown that AC-conduction mechanism along the crystallographic axis C in the 103–105 Hz have hopping character. The parameters of the band theory of hopping conduction were calculated. The frequency dependence of ε' and ε'' components of permittivity in HxGaSe were obtained.

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