Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS | Zendy

S.P. Novosyadlyi | Zendy; V.S. Huzik | Zendy

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Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS

Author(s) -

S.P. Novosyadlyi,

V.S. Huzik

Publication year - 2015

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.16.3.599-605

Subject(s) - gallium arsenide , microelectronics , optoelectronics , silicon , materials science , electronic circuit , transistor , integrated circuit , semiconductor , semiconductor device , electrical engineering , nanotechnology , engineering , voltage , layer (electronics)

Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).

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