Open AccessComputer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS
Author(s) -
S. P. Novosyadlyi,
V. S. Huzik
Publication year - 2015
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.16.3.599-605
Subject(s) - gallium arsenide , microelectronics , optoelectronics , silicon , materials science , electronic circuit , transistor , integrated circuit , semiconductor , semiconductor device , electrical engineering , nanotechnology , engineering , voltage , layer (electronics)
Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).