Open AccessEffect of Point Defect in Carbon Nanotube (8.0) on the Molecular Electrostatic Potential distribution Near it Edge
Author(s) -
A. M. Datsyuk
Publication year - 2015
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.16.3.515-519
Subject(s) - carbon nanotube , vacancy defect , materials science , ab initio , crystallographic defect , perpendicular , nanotube , chemical physics , carbon fibers , molecular physics , molecular dynamics , carbon nanotube quantum dot , electronic structure , nanotechnology , condensed matter physics , computational chemistry , chemistry , geometry , physics , composite material , composite number , quantum mechanics , mathematics
The influence of point defect on the electronic and spatial structure of carbon nanotubes (8.0) have been studied depending on the placement vacancies in the structure of nanotubes.
On the basis of quantum-chemical calculations and using semi-empirical and ab initio approaches the maps of the distribution of molecular electrostatic potential were builds in the planes which are perpendicular to the main axis of the nanotubes. It is shown that defects such as vacancy, are placed outside the first hexagonal carbon belt no effect on the topology of the distribution of molecular electrostatic potential in the vicinity of the entrance to the carbon nanotube. Instead, reactivity of port’s atoms such nanotubes may determinated point defects of the vacancy type to be placed in first hexagonal belt.