Interaction of Electromagnetic H-wave with the thin Metal Film is Located on the Dielectric Substrate | Zendy

А. И. Уткин | Zendy; A. A. Yushkanov | Zendy

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Interaction of Electromagnetic H-wave with the thin Metal Film is Located on the Dielectric Substrate

Author(s) -

А. И. Уткин,

A. A. Yushkanov

Publication year - 2015

Publication title -

physics and chemistry of solid state

Language(s) - English

Resource type - Journals

eISSN - 2309-8589

pISSN - 1729-4428

DOI - 10.15330/pcss.16.2.253-256

Subject(s) - reflection coefficient , transmission coefficient , dielectric , electromagnetic radiation , attenuation coefficient , reflection (computer programming) , materials science , metal , optics , substrate (aquarium) , thin film , condensed matter physics , transmission (telecommunications) , physics , optoelectronics , geology , electrical engineering , nanotechnology , metallurgy , oceanography , computer science , programming language , engineering

Interaction of electromagnetic H-wave with thin metal film is located between two dielectric environments ε1, ε2 in the case of different incident angles of H-wave θ and in the case of different reflection coefficients q1 и q2 is calculated in this article. Behavior analysis of reflection coefficient R, transmission coefficient T and absorption coefficient A in the case of its frequency dependence y and variation dielectric permeability of its environments is done.

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