Open AccessInteraction of Electromagnetic H-wave with the thin Metal Film is Located on the Dielectric Substrate
Author(s) -
А. І. Utkin,
А. А. Yushkanov
Publication year - 2015
Publication title -
fìzika ì hìmìâ tverdogo tìla
Language(s) - English
Resource type - Journals
eISSN - 2309-8589
pISSN - 1729-4428
DOI - 10.15330/pcss.16.2.253-256
Subject(s) - reflection coefficient , transmission coefficient , dielectric , electromagnetic radiation , attenuation coefficient , reflection (computer programming) , materials science , metal , optics , substrate (aquarium) , thin film , condensed matter physics , transmission (telecommunications) , physics , optoelectronics , geology , electrical engineering , nanotechnology , metallurgy , oceanography , computer science , programming language , engineering
Interaction of electromagnetic H-wave with thin metal film is located between two dielectric environments ε1, ε2 in the case of different incident angles of H-wave θ and in the case of different reflection coefficients q1 и q2 is calculated in this article. Behavior analysis of reflection coefficient R, transmission coefficient T and absorption coefficient A in the case of its frequency dependence y and variation dielectric permeability of its environments is done.