Open AccessInfluence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs
Author(s) -
H. L. Hao,
M. Y. Su,
H. T. Wu,
H. Y. Mei,
R. X. Yao,
F. Liu,
H. Wen,
S. X. Sun
Publication year - 2022
Publication title -
journal of ovonic research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.361
H-Index - 12
eISSN - 1842-2403
pISSN - 1584-9953
DOI - 10.15251/jor.2022.183.411
Subject(s) - transconductance , materials science , optoelectronics , high electron mobility transistor , channel (broadcasting) , indium gallium arsenide , oscillation (cell signaling) , subthreshold conduction , gallium arsenide , transistor , electrical engineering , chemistry , engineering , biochemistry , voltage