Open AccessThe temperature dependent current-voltage characteristics of chemically prepared AL/(P)PBS Schottky barrier junction
Author(s) -
L. Rajen Singh,
M. A. Hussain
Publication year - 2022
Publication title -
chalcogenide letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.234
H-Index - 30
eISSN - 1841-4834
pISSN - 1584-8663
DOI - 10.15251/cl.2022.192.131
Subject(s) - chemical bath deposition , materials science , schottky barrier , analytical chemistry (journal) , scanning electron microscope , nanocrystalline material , transmission electron microscopy , schottky diode , indium tin oxide , thiourea , thin film , nanotechnology , chemistry , optoelectronics , composite material , chromatography , diode , organic chemistry
Zinc (Zn) doped nanocrystalline lead sulphide (PbS) thin film is prepared by chemical bath deposition (CBD) method at bath deposition temperature 313K using Zinc Acetate, Lead Acetate and Thiourea. The prepared films is characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. Al/(p)PbS Schottky barrier junctions are fabricated onto indium tin oxide (ITO) substrate to study the junction parameters. The Current-Voltage (I-V) characteristics of the junctions is measure in the temperature range of 303 to 333 K and various junction parameters are calculated. The ideality factor (n) and Schottky barrier height ( ) b at different temperatures are found to vary from 5.31 to 4.47 and 0.749 eV to 0.755 eV respectively. The carrier concentration is determined from the capacitance-voltage (C-V) plot and found to be of the order 1016cm-3 .