Open AccessA new approach to increasing the sensitivity of a gas sensor based on nanocrystalline silicon carbide films
Author(s) -
А. А. Семенов,
D. V. Lubov
Publication year - 2021
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2021.5-6.11
Subject(s) - nanocrystalline material , silicon carbide , materials science , conductivity , sensitivity (control systems) , carbide , optoelectronics , electrical resistivity and conductivity , thin film , composite material , analytical chemistry (journal) , nanotechnology , electronic engineering , electrical engineering , chemistry , engineering , chromatography
It was shown the possibility of increasing the sensitivity of a gas sensor based on nanocrystalline SiC films by using a scheme of a two-component sensing element, one of which is an n-nc-SiC film with electronic conductivity, and the second is an p-nc-SiC film with hole conductivity. It is shown that due to the opposite polarity of changes in resistance in the films under the simultaneous action of gases, the difference in relative resistance changes ∆ in the n-nc-SiC and p-nc-SiC films will always be greater than in each film separately. The expediency of using a two-component sensing element of a gas sensor based on nc-SiC films with electron and hole conduction is shown.