Open AccessHigh-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm
Author(s) -
Mykola S. Kukurudziak,
Olga P. Andreeva,
Volodymyr M. Lipka
Publication year - 2020
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2020.5-6.16
Subject(s) - responsivity , photodiode , wavelength , optoelectronics , silicon , materials science , photodetector
The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.