Open AccessInfluence of gettering on aluminum ohmic contact formation
Author(s) -
V. N. Litvinenko,
Ye.A. Baganov,
І. М. Викулин,
V. E. Gorbachev
Publication year - 2020
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2020.1-2.45
Subject(s) - getter , ohmic contact , materials science , aluminium , substrate (aquarium) , optoelectronics , epitaxy , layer (electronics) , yield (engineering) , metallurgy , nanotechnology , geology , oceanography
The study considers the reasons and mechanisms of degradation of reverse characteristics of varicaps with aluminum-based ohmic contacts. The authors present and analyze the experimental results on how gettering affects the reverse current of varicaps, as well as possible mechanisms of such effect. Gettering was performed with a getter site created on the back side of the substrate before the epitaxial layer is deposited on the working side of the substrate. The article demonstrates that the proposed technology using gettering is rather effective in reducing the level of reverse currents and in increasing the yield of devices.