Open AccessDeformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications
Author(s) -
Anatoly Druzhinin,
Yuriy Khoverko,
Igor Ostrovskii,
Natalia Liakh-Kaguy,
O. A. Pasynkova
Publication year - 2019
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2019.3-4.03
Subject(s) - indium antimonide , liquid helium , materials science , indium , deformation (meteorology) , magnetoresistance , magnetic field , electrical resistivity and conductivity , condensed matter physics , doping , gauge factor , microstructure , helium , composite material , optoelectronics , chemistry , electrical engineering , physics , organic chemistry , quantum mechanics , medicine , alternative medicine , pathology , fabrication , engineering
The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF4.2K ≈ 72 for the charge carrier concentration of 2∙1017 сm–3, while being GF4.2K ≈ 47 for the concentration of 6∙1017 сm–3, at ε = –3∙10–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.