Open AccessImprovement of the reverse characteristics of Schottky diodes using gettering
Author(s) -
V. N. Litvinenko,
І. М. Викулин,
V. E. Gorbachev
Publication year - 2019
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2019.1-2.34
Subject(s) - getter , schottky diode , diode , materials science , optoelectronics , schottky barrier , reverse bias , current (fluid) , impurity , yield (engineering) , saturation current , reverse leakage current , engineering physics , electrical engineering , chemistry , metallurgy , engineering , voltage , organic chemistry
The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse side of the plate, on the value of the reverse current of diodes was experimentally investigated, and the physical factors of such influence were analyzed. The proposed technology for creating getter regions allows one to significantly reduce the reverse current of diodes and increase the product yield.