Open AccessEffect of electron irradiation on the optical properties of nanocrystalline SiC films on single crystal Al2O3 substrates
Author(s) -
А. В. Семенов,
А. В. Лопин,
В.Н. Борискин,
А. В. Семенов,
А. В. Лопин,
В.Н. Борискин
Publication year - 2017
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2017.3.40
Subject(s) - nanocrystalline material , sapphire , materials science , fluence , irradiation , annealing (glass) , silicon carbide , electron beam processing , electron , optoelectronics , optics , nanotechnology , composite material , laser , physics , nuclear physics , quantum mechanics
It was studied the effect of irradiation with high-energy (10 MeV) electrons on the optical properties of nanocrystalline carbide film system silicon / sapphire substrates in a wide range of fluences of 5•1014 to 9•1019 cm–2 and subsequent annealing in vacuum in the range of 200—1200°C. It was found that radiation-induced changes in the optical properties of nc-SiC films is primarily manifested in the UV region of the spectrum associated with interband transitions, as well as in the region of the spectrum due to the absorption of intrinsic defects and disordered regions. It was established in the beginning of the annealing of defects in irradiated films has been observed at 200°C, which indicates the high concentration of carbon vacancies with the lowest activation energy. Significant changes in the optical properties of sapphire begin at fluence 5•1017 cm–2, which should be considered when using these materials under conditions of intense radiation impact.