Open AccessElectrical and photoelectric properties of heterostructures NiO/p-CdTe and NiO/n-CdTe
Author(s) -
Hryhorii P. Parkhomenko,
П. Д. Марьянчук,
Hryhorii P. Parkhomenko,
P. D. Maryanchuk
Publication year - 2016
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2016.4-5.29
Subject(s) - non blocking i/o , heterojunction , cadmium telluride photovoltaics , photoelectric effect , materials science , optoelectronics , sputter deposition , open circuit voltage , sputtering , thin film , voltage , nanotechnology , chemistry , electrical engineering , engineering , biochemistry , catalysis
In this study, we investigate the electrical and photoelectric properties of heterostructures formed by the reactive magnetron sputtering of thin film NiO onto p-CdTe and n-CdTe substrates. The current-voltage characteristics of the heterojunctions were measured at room temperature. The dominating current transport mechanisms through the NiO/n-CdTe and NiO/p-CdTe heterojunctions at the forward biases are generation-recombination and tunnel, at the reverse biases is tunnel current transport mechanisms. The heterojunctions under investigation generate open-circuit voltage Uoc = 0.26 V and short-circuit current Isc = 58.7 µÀ/cm2 under illumination 80 mW/cm–2.The research results can be used for better understanding of the processes occurring in heterojunctions NiO/n-CdTe and NiO/p-CdTe, to further improve their properties and parameters.