Open AccessInfluence of copper intercalation on thermoelectric properties change in Bi2Te3<Cu> doped crystals during storage
Author(s) -
А. П. Алиева,
S. S. Kakhramanov,
А. Ш. Кахраманов,
A. P. Aliyeva,
A. Sh. Gahramanov,
S. Sh. Gahramanov
Publication year - 2016
Publication title -
tehnologiâ i konstruirovanie v èlektronnoj apparature
Language(s) - English
Resource type - Journals
eISSN - 2309-9992
pISSN - 2225-5818
DOI - 10.15222/tkea2016.2-3.49
Subject(s) - indium , materials science , thermoelectric effect , crystallization , doping , copper , bismuth , intercalation (chemistry) , crystal (programming language) , crystallography , condensed matter physics , chemical engineering , inorganic chemistry , optoelectronics , metallurgy , chemistry , thermodynamics , physics , computer science , engineering , programming language
The authors investigate the change in the thermoelectric properties of Bi2Te3 crystals doped by bismuth and indium during their storage. It is shown that such change is caused by the spontaneous overflow of Cu atoms deposited during the initial crystallization period between Te(2)—Bi and Bi—Te(2) layers, and in defect centers perpendicularly to the surface of the crystal (0001), which culminates in the formation of dissipative nanostructures. It was found that thermoelectric properties of crystals doped with indium undergo the most significant change.